F. F. Fang - Concepedia

Author

F. F. Fang

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

F F Fang, F. F. FANG, F. F. Fang, F. Fang, F.F. Fang, Frank F. Fang, Frank Fang

115

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Brown University UNSW Sydney

About

F. F. Fang is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	46	3.8K
2	Applied Physics	28	48	3.8K
3	Electrical Engineering	16	17	1.1K
4	Natural Sciences	12	13	1.4K
5	Computer Engineering	2	2	52

F. F. Fang

Publications

Citations

H-Index

Page 1

	Year	Citations
Negative Field-Effect Mobility on (100) Si Surfaces F. F. Fang, W. E. Howard Physical Review Letters EngineeringPhysicsSurface ScienceApplied PhysicsNegative Field-effect Mobility	1966	522
Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas F. F. Fang, P. J. Stiles Physical Review Magnetic PropertiesEngineeringSilicon On InsulatorSemiconductor NanostructuresSemiconductors	1968	488
Magneto-Oscillatory Conductance in Silicon Surfaces A. B. Fowler, F. F. Fang, W. E. Howard, Physical Review Letters MagnetismSpintronicsEngineeringPhysicsNanoelectronics	1966	373
Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells Jiexin Luo, H. Munekata, F. F. Fang, Physical review. B, Condensed matter EngineeringTopological Quantum StateSpin PhenomenonGasb/inas/gasb Quantum WellsElectron Ground Subband	1990	367
Transport Properties of Electrons in Inverted Silicon Surfaces F. F. Fang, A. B. Fowler Physical Review Conductance ThresholdElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1968	329
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers F. F. Fang, A. B. Fowler Journal of Applied Physics Semiconductor TechnologyElectron Drift VelocityElectrical EngineeringSemiconductor DeviceEngineering	1970	229
Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells Jiexin Luo, H. Munekata, F. F. Fang, Physical review. B, Condensed matter EngineeringMagnetic ResonanceSpintronic MaterialSpin PhenomenonMagnetism	1988	191
Effective mass and collision time of (100) Si surface electrons F. F. Fang, A. B. Fowler, A. Hartstein Physical review. B, Solid state Electrical EngineeringEngineeringPhysicsElectron SpectroscopyNanoelectronics	1977	96
MORAb-202, an Antibody–Drug Conjugate Utilizing Humanized Anti-human FRα Farletuzumab and the Microtubule-targeting Agent Eribulin, has Potent Antitumor Activity Xin Cheng, Jing Li, Keigo Tanaka, Molecular Cancer Therapeutics	2018	89
Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures F. F. Fang, T. P. Smith, S. L. Wright Surface Science Quantum ScienceEngineeringPhysicsApplied PhysicsQuantum Materials	1988	87

Page 1