H. Munekata - Concepedia

Author

H. Munekata

IBM Research - Thomas J. Watson Research Center

Also Known As

H Munekata, H. MUNEKATA, H. Munekata, Munekata, H.

106

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center Tokyo Institute of Technology IBM (United States)Kanagawa Academy of Science and Technology University of Rhode Island

About

H. Munekata is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	33	2.6K
2	Applied Physics	19	34	2.6K
3	Natural Sciences	10	10	1.9K
4	Electrical Engineering	4	4	140
5	Medicine	1	1	22

H. Munekata

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Diluted magnetic III-V semiconductors H. Munekata, Hideo Ohno, S. von Molnár, Physical Review Letters Wide-bandgap SemiconductorMagnetic PropertiesEngineeringMagnetoresistanceSemiconductors	1989	1.1K
Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells Jiexin Luo, H. Munekata, F. F. Fang, Physical review. B, Condensed matter EngineeringTopological Quantum StateSpin PhenomenonGasb/inas/gasb Quantum WellsElectron Ground Subband	1990	367
Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells Jiexin Luo, H. Munekata, F. F. Fang, Physical review. B, Condensed matter EngineeringMagnetic ResonanceSpintronic MaterialSpin PhenomenonMagnetism	1988	191
Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures H. Munekata, T. Abe, Shin‐ya Koshihara, Journal of Applied Physics SpintronicsFerromagnetismMagnetismEngineeringMagnetoresistance	1997	82
III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs Y. L. Soo, S. W. Huang, Z. H. Ming, Physical review. B, Condensed matter Magnetic SemiconductorX-ray SpectroscopyEngineeringSemiconductor DeviceSemiconductors	1996	78
Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100) C. W. Snyder, B. G. Orr, H. Munekata Applied Physics Letters Materials ScienceMaterials EngineeringEpitaxial GrowthCation Flux RatioEngineering	1993	64
New diluted magnetic semiconductors based on III–V compounds S. von Molnár, H. Munekata, Hideo Ohno, Journal of Magnetism and Magnetic Materials SemiconductorsMagnetismSemiconductor TechnologyEngineeringApplied Physics	1991	63
P-Type diluted magnetic III–V semiconductors H. Munekata, Hideo Ohno, R. Ruf, Journal of Crystal Growth SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringMagnetic Iii–v Semiconductors	1991	62
Epitaxy of III–V diluted magnetic semiconductor materials H. Munekata, Hideo Ohno, S. von Molnár, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Magnetic PropertiesEngineeringMagnetic MaterialsMagnetic Semiconductor MaterialsSemiconductors	1990	58
Heterojunction field-effect transistors based on AlGaSb/InAs L. F. Luo, R. Beresford, W. I. Wang, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringDevice ConfigurationsEngineeringV Drain-source Bias	1989	54

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