Diluted magnetic III-V semiconductors

Abstract

A new diluted magnetic III-V semiconductor of ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Mn}}_{\mathrm{x}}$As (x\ensuremath{\le}0.18) has been produced by molecular-beam epitaxy. Films grown at 300 \ifmmode^\circ\else\textdegree\fi{}C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 \ifmmode^\circ\else\textdegree\fi{}C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.