Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures

Abstract

We report for the first time the occurrence of light-induced ferromagnetic order in the III-V-based diluted magnetic semiconductor heterostructures (In,Mn)As/GaSb. We believe that the phenomenon is based on the generation of excess carriers (holes) in the (In,Mn)As layer by the irradiation of light, which enhances a carrier-mediated ferromagnetic interaction between Mn ions.