A. B. Fowler - Concepedia

Author

A. B. Fowler

IBM Research - Thomas J. Watson Research Center

Also Known As

A B Fowler, A Fowler, A. B. FOWLER, A. B. Fowler, A.B Fowler, A.B. FOWLER, A.B. Fowler, Alan B. Fowler, Alan Fowler, Fowler, A. B.

Publications

10.7K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

A. B. Fowler is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	42	10.5K
2	Applied Physics	26	40	10.4K
3	Natural Sciences	3	3	281
4	Education	2	2	36
5	Computer Science	1	1	23

A. B. Fowler

Publications

10.6K

Citations

H-Index

Page 1

	Year	Citations
Electronic properties of two-dimensional systems Tsuneya Ando, A. B. Fowler, Frank Stern Reviews of Modern Physics Ii-vi SemiconductorElectrical EngineeringEngineeringLiquid HeliumPhysics	1982	7.3K
Magneto-Oscillatory Conductance in Silicon Surfaces A. B. Fowler, F. F. Fang, W. E. Howard, Physical Review Letters MagnetismSpintronicsEngineeringPhysicsNanoelectronics	1966	373
Transport Properties of Electrons in Inverted Silicon Surfaces F. F. Fang, A. B. Fowler Physical Review Conductance ThresholdElectrical EngineeringSemiconductor DeviceEngineeringPhysics	1968	329
Conductance in Restricted-Dimensionality Accumulation Layers A. B. Fowler, A. Hartstein, R. A. Webb Physical Review Letters EngineeringIntegrated CircuitsSemiconductor DeviceSmall DimensionsSemiconductors	1982	317
Metal-Insulator Transition in Two Dimensions: Effects of Disorder and Magnetic Field Dragana Popović, A. B. Fowler, S. Washburn Physical Review Letters EngineeringMagnetic ResonanceOne-dimensional MagnetismStrongly Correlated Electron SystemsSpintronic Material	1997	245
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers F. F. Fang, A. B. Fowler Journal of Applied Physics Semiconductor TechnologyElectron Drift VelocityElectrical EngineeringSemiconductor DeviceEngineering	1970	229
Quantized Hall Effect in the Presence of Backscattering S. Washburn, A. B. Fowler, H. Schmid, Physical Review Letters Quantum ScienceElectrical EngineeringEngineeringQuantum ComputingPhysics	1988	185
Electron scattering in silicon inversion layers by oxide and surface roughness A. Hartstein, T.H. Ning, A. B. Fowler Surface Science Surface CharacterizationElectron ScatteringEngineeringPhysicsSurface Roughness	1976	135
Observation of resonant tunneling in silicon inversion layers A. B. Fowler, G. Timp, Jacques Wainer, Physical Review Letters EngineeringTunneling MicroscopyPhysicsNanoelectronicsApplied Physics	1986	120
Effective mass and collision time of (100) Si surface electrons F. F. Fang, A. B. Fowler, A. Hartstein Physical review. B, Solid state Electrical EngineeringEngineeringPhysicsElectron SpectroscopyNanoelectronics	1977	96

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