Concepedia

(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

Chadwin D. Young, Kerem Akarvardar, Mehmet O. Baykan, K. Matthews, T. Ngai, Kah‐Wee Ang, James Pater, Casey Smith, Muhammad M. Hussain, P. Majhi,

Solid-State Electronics · 2012 · 33 citations · 57 references

DOI

Concepts

References

57

A reliable approach to charge-pumping measurements in MOS transistors

G. Groeseneken, H.E. Maes, N. Beltran et al. · IEEE Transactions on Electron Devices · 1984 · 1.4K citations

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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

D.K. Schroder, Jeff A. Babcock · Journal of Applied Physics · 2003 · 1K citations

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Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 742 citations

, , +17

High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

R. Chau, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2004 · 468 citations

, , +17

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

Shinichi Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 371 citations

, , +17