Concepedia

Electromigration Analysis

Electromigration Analysis is a physical reliability assessment method within integrated circuit design that evaluates the progressive degradation of interconnects caused by the directed movement of metal atoms under prolonged current density stress.

1.4K

Publications

53K

Citations

3.5K

Authors

636

Institutions

Publications per year

2017–2026

162

Parents

Publications

1.4K

Electromigration—A brief survey and some recent results

J. R. Black · IEEE Transactions on Electron Devices · 1969 · 1.5K citations

, , +17

Stress evolution due to electromigration in confined metal lines

M. A. Korhonen, P. Bo rgesen, K. N. Tu et al. · Journal of Applied Physics · 1993 · 733 citations

, , +17

Electromigration failure modes in aluminum metallization for semiconductor devices

J. R. Black · Proceedings of the IEEE · 1969 · 675 citations

, , +16

Stress generation by electromigration

I. A. Blech, Conyers Herring · Applied Physics Letters · 1976 · 515 citations

, , +16

Current-crowding-induced electromigration failure in flip chip solder joints

Everett C. C. Yeh, Woon‐Seop Choi, K. N. Tu et al. · Applied Physics Letters · 2002 · 363 citations

, , +17

1–5 of 1.4K

Authors

3.5K

  1. KN
    K. N. Tu

    University of California, Los Angeles, United States

    35 publications · 2.4K citations

    26

    h-index

  2. CC
    Chih Chen

    National Yang Ming Chiao Tung University, Taiwan

    38 publications · 1.9K citations

    25

    h-index

  3. CV
    Carl V. Thompson

    Massachusetts Institute of Technology, United States

    29 publications · 1.2K citations

    21

    h-index

  4. SX
    Sheldon X.-D. Tan

    University of California, Riverside, United States

    33 publications · 1K citations

    20

    h-index

  5. PS
    Paul S. Ho

    The University of Texas at Austin, United States

    30 publications · 1.3K citations

    19

    h-index

1–5 of 3.5K

Institutions

636

  1. IBM (United States)

    Armonk, United States

    31 h-index

    342 publications

    12.2K citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    30 h-index

    199 publications

    12.1K citations

  3. University of California, Los Angeles

    Los Angeles, United States

    29 h-index

    90 publications

    7.5K citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    27 h-index

    151 publications

    5.7K citations

  5. Texas Instruments (United States)

    Dallas, United States

    25 h-index

    106 publications

    4K citations

  6. Nanyang Technological University

    Singapore, Singapore

    25 h-index

    102 publications

    4K citations

  7. Semiconductor Manufacturing International (Italy)

    Agrate Brianza, Italy

    23 h-index

    29 publications

    2.5K citations

  8. Hodges University

    Naples, United States

    23 h-index

    29 publications

    2.5K citations

1–8 of 636

Venues

  1. Applied Physics Letters

    121 publications · 8K citations

    50

    h-index

  2. Journal of Applied Physics

    129 publications · 6.7K citations

    42

    h-index

  3. Microelectronics Reliability

    71 publications · 2.5K citations

    27

    h-index

  4. Journal of Electronic Materials

    JEM · 59 publications · 1.5K citations

    24

    h-index

  5. IEEE Transactions on Electron Devices

    32 publications · 2.7K citations

    22

    h-index

1–5