P. Bo rgesen - Concepedia

Concepedia

Author

P. Bo rgesen

Cornell University

Also Known As

P. Bo rgesen, P. Bo/rgesen

18

Publications

1.2K

Citations

11

H-Index

32

Concepts

All Affiliations

Cornell University

PB

About

P. Bo rgesen is an author at Cornell University specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	1.1K
2	Applied Physics	10	10	1.1K
3	Materials Engineering	6	6	234
4	Electrical Engineering	4	4	856
5	Natural Sciences	1	1	58

P. Bo rgesen

×

11

Publications

1.2K

Citations

11

H-Index

	Year	Citations
Stress evolution due to electromigration in confined metal lines M. A. Korhonen, P. Bo rgesen, K. N. Tu, Journal of Applied Physics EngineeringBack StressesChip LevelIntegrated CircuitsStress Evolution	1993	724
Microstructure based statistical model of electromigration damage in confined line metallizations in the presence of thermally induced stresses M. A. Korhonen, P. Bo rgesen, D. D. Brown, Journal of Applied Physics EngineeringMechanical EngineeringConfined Line MetallizationsDamage MechanismReliability Engineering	1993	102
Thermal-stress-induced voiding in narrow, passivated Cu lines P. Bo rgesen, J. K. Lee, R. J. Gleixner, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringPassivated Aluminum LinesEngineering	1992	66
Do thermal spikes contribute to the ion-induced mixing of Ni into Zr, Ti, and Pd? P. Bo rgesen, D. A. Lilienfeld, H. H. Johnson Applied Physics Letters Materials ScienceNuclear Damage EnergyIon ImplantationEngineeringPhysics	1990	58
Stress-migration related electromigration damage mechanism in passivated, narrow interconnects C.-Y. Li, P. Bo rgesen, Timothy D. Sullivan Applied Physics Letters EngineeringPassivated Metal InterconnectsInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)Nanoelectronics	1991	50
Stress-induced nucleation of voids in narrow aluminum-based metallizations on silicon substrates M. A. Korhonen, W. R. LaFontaine, P. Bo rgesen, Journal of Applied Physics EngineeringSevere Plastic DeformationCold WorkingSilicon SubstratesResidual Stress	1991	49
Ranges of 10–30-keV deuterons implanted into solids P. Bo rgesen, J. Bo ttiger, W. Möller Journal of Applied Physics	1978	40
Erosion of solid neon by keV electrons Jørgen Schou, P. Bo rgesen, Ole Ellegaard, Physical review. B, Condensed matter EngineeringGlow DischargeThin Film Process TechnologyVacuum DeviceChemical Deposition	1986	40
Electromigration-induced failure in passivated aluminum-based metallizations−The dependence on temperature and current density C.-Y. Li, P. Bo rgesen, M. A. Korhonen Applied Physics Letters EngineeringCurrent DensityElectromigration-induced FailurePassivated Narrow LinesCorrosion	1992	16
Observation of multiple precipitate layers in MeV Au++-implanted silicon T. L. Alford, N. David Theodore, Elizabeth Fleischer, Applied Physics Letters Materials EngineeringMaterials ScienceIon ImplantationEngineeringDislocation Interaction	1990	13

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