Concepedia

R. J. Gleixner

RJ

6

Publications

315

Citations

6

H-Index

1992

Active since

Affiliations

Stanford University(Current)

R. J. Gleixner is an author at Stanford University specializing in applied physics, microelectronics, and engineering.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectronic PackagingElectrical EngineeringMicrostructureMaterial ScienceElectrical InsulationPhysicsSolid Mechanics

Publications per year

1992–1999

6

Publications

6

Void Nucleation in Passivated Interconnect Lines: Effects of Site Geometries, Interfaces, and Interface Flaws

R. J. Gleixner, B Clemens, William D. Nix · Journal of materials research/Pratt's guide to venture capital sources · 1997 · 112 citations

Physical Design (Electronics), Engineering, Advanced Packaging (Semiconductors) +8

A physically based model of electromigration and stress-induced void formation in microelectronic interconnects

R. J. Gleixner, William D. Nix · Journal of Applied Physics · 1999 · 67 citations

Engineering, Stress Evolution, Defect Tolerance +23

Thermal-stress-induced voiding in narrow, passivated Cu lines

P. Bo rgesen, J. K. Lee, R. J. Gleixner et al. · Applied Physics Letters · 1992 · 66 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Void Nucleation on a Contaminated Patch

B Clemens, William D. Nix, R. J. Gleixner · Journal of materials research/Pratt's guide to venture capital sources · 1997 · 44 citations

Nucleation, Void Nucleation

An Analysis of Void Nucleation In Passivated Interconnect Lines Due to Vacancy Condensation and Interface Contamination

R. J. Gleixner, W.D. Nix · MRS Proceedings · 1996 · 13 citations

Defect Tolerance, Electrical Engineering, Electromigration Technique +9

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