Electronics Letters · 2005 · 12 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilitySemiconductor Device MaterialsSemiconductor PhysicsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesContact DegradationContact ReliabilityGallium Nitride (Gan) MaterialsReliability DegradationSchottky ContactsThermal StabilityThermal StorageThermal Test Methodology
The reliability of Mo-based Schottky contact for an AlGaN/GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo/Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340°C.
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