2015 · 43 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor DefectsSemiconductor ReliabilityCmos ReliabilityDevice VariabilityGate Oxide LeakageGate Oxide ReliabilityMetal-oxide-semiconductor Field-effect Transistor ModelingProcess Variation Analysis
Here we show that nFET and pFET time-dependent variability, in addition to the standard time-zero variability, can be fully characterized and projected using a series of measurements on a large test element group (TEG) fabricated in an advanced High-k/Metal Gate (HK/MG) technology, thus allowing us to fully characterize the underlying technology. BTI is shown to follow a bimodal defect-centric behavior, for NBTI related to Interface Layer (IL)(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) and HK trapping and for PBTI related to HK and IL/HK interface trapping. Moreover for the first time, an analytical description of the bimodal total ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> shift is derived, as a special case of the generalized defect-centric distribution, which we derive in this work to accurately describe the tail of the distribution.
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Origin of NBTI variability in deeply scaled pFETs
B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 309 citations
Recent advances in understanding the bias temperature instability
Tibor Grasser, B. Kaczer, Wolfgang Goes et al. · 2010 · 105 citations