Concepedia

Charge Trapping Reliability

Charge Trapping Reliability is a semiconductor reliability metric that quantifies the susceptibility of a device to performance degradation due to the accumulation of charge carriers in defect states within the dielectric or at interface regions under electrical and environmental stress.

78

Publications

2.8K

Citations

468

Authors

118

Institutions

Publications per year

2017–2026

21

Parents

Publications

78

A Study of Endurance Issues in HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Nanbo Gong, Tso‐Ping Ma · IEEE Electron Device Letters · 2017 · 260 citations

, , +17

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

Sufi Zafar, Y. Kim, Vijay Narayanan et al. · 2006 · 201 citations

, , +17

Flash EEPROM Threshold Instabilities due to Charge Trapping During Program/Erase Cycling

Neal Mielke, Hanmant Belgal, I. Kalastirsky et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 170 citations

, , +17

Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · 2003 · 92 citations

, , +16

Novel read disturb failure mechanism induced by FLASH cycling

Adam Brand, Kehuey Wu, Shijie Pan et al. · 1993 · 88 citations

, , +16

1–5 of 78

Authors

468

  1. GG
    G. Groeseneken

    IMEC, Belgium

    6 publications · 299 citations

    6

    h-index

  2. RD
    R. Degraeve

    IMEC, Belgium

    5 publications · 288 citations

    5

    h-index

  3. BK
    B. Kaczer

    IMEC, Belgium

    5 publications · 110 citations

    5

    h-index

  4. HM
    H.E. Maes

    IMEC, Belgium

    4 publications · 277 citations

    4

    h-index

  5. CS
    C. Sandhya

    Indian Institute of Technology Bombay, India

    4 publications · 103 citations

    4

    h-index

1–5 of 468

Institutions

118

  1. IMEC

    Leuven, Belgium

    9 h-index

    61 publications

    2.1K citations

  2. KU Leuven

    Leuven, Belgium

    5 h-index

    12 publications

    568 citations

  3. Indian Institute of Technology Bombay

    Mumbai, India

    4 h-index

    18 publications

    484 citations

  4. Applied Materials (United States)

    Santa Clara, United States

    4 h-index

    26 publications

    633 citations

  5. Samsung (South Korea)

    Seoul, South Korea

    4 h-index

    23 publications

    877 citations

  6. Macronix International (Taiwan)

    Hsinchu, Taiwan

    3 h-index

    28 publications

    535 citations

  7. IBM (United States)

    Armonk, United States

    3 h-index

    16 publications

    1.9K citations

  8. Intel (United States)

    Santa Clara, United States

    3 h-index

    15 publications

    1.6K citations

1–8 of 118

Venues

  1. IEEE Electron Device Letters

    10 publications · 528 citations

    10

    h-index

  2. IEEE Transactions on Electron Devices

    10 publications · 307 citations

    9

    h-index

  3. Microelectronics Reliability

    6 publications · 165 citations

    6

    h-index

  4. Microelectronic Engineering

    5 publications · 154 citations

    5

    h-index

  5. Applied Physics Letters

    3 publications · 105 citations

    3

    h-index

1–5