C. Sandhya

Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation

C. Sandhya, Udayan Ganguly, Nihit Chattar et al. · IEEE Electron Device Letters · 2009 · 36 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

C. Sandhya, Apoorva B. Oak, Nihit Chattar et al. · IEEE Transactions on Electron Devices · 2009 · 30 citations

Non-volatile Memory, Engineering, Computer Architecture +16

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

A. Bastard, Jean-Claude Bastien, Bérangère Hyot et al. · Applied Physics Letters · 2011 · 25 citations · Full text

Engineering, Transmission Electron Microscopy, Microscopy +18

Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability

C. Sandhya, Udayan Ganguly, Kavita Singh et al. · 2008 · 23 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash

C. Sandhya, Udayan Ganguly, Kavita Singh et al. · 2008 · 13 citations

Engineering, Emerging Memory Technology, Semiconductor Device +19