K. Vandersmissen

Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects

Olalla Varela Pedreira, Kristof Croes, A. Leśniewska et al. · 2017 · 77 citations

Reliability Study, Engineering, Beol Interconnects +17

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 62 citations

Electrical Engineering, Capacitorless Dram, Engineering +13

Modeling of Via Resistance for Advanced Technology Nodes

Ivan Ciofi, Philippe Roussel, Yves Saad et al. · IEEE Transactions on Electron Devices · 2017 · 61 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +17

Cobalt bottom-up contact and via prefill enabling advanced logic and DRAM technologies

Marleen H. van der Veen, K. Vandersmissen, Dries Dictus et al. · 2015 · 52 citations

Engineering, Contact Fill, Emerging Memory Technology +21

Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers

A. Redolfi, Dimitrios Velenis, Sarasvathi Thangaraju et al. · 2011 · 52 citations

Engineering, Silicon Vias, Integrated Circuits +18