EngineeringComputer EngineeringMicroelectronicsStorage SystemsSystem-on-chip DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ScalingIntegrated Circuit DesignMemory Devices3D Integrated CircuitsFlash MemoryFlash Memory DevicesMemory Array ArchitectureMemory Circuit DesignThree-dimensional Integrated Circuit LayoutThree-dimensional IntegrationThree-dimensional Memory
3D stacked devices have been developed and manufactured to realize gains in power, performance, area and cost (PPAC) in various devices. In this work, CMOS directly bonded to array (CBA) technology is applied to 3D flash memory. As a result, CMOS and cell performance can be improved, and further 2D and 3D scaling can be achieved. CBA technology is essential to realize PPAC goals for future 3D flash memory.
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Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding
Y. Kagawa, Nobutoshi Fujii, Kenichi Aoyagi et al. · 2016 · 234 citations
Impacts of Misalignment on 1μm Pitch Cu-Cu Hybrid Bonding
Y. Kagawa, H. Hashiguchi, Takumi Kamibayashi et al. · 2020 · 29 citations
Natural Sciences, Electrical Engineering, Materials Science +13