Concepedia

Flash Memory

Flash Memory is a non-volatile semiconductor storage device that enables electronic data to be electrically programmed, erased, and retained without power, distinguishing itself from volatile memory technologies by maintaining stored information in the absence of continuous electrical supply.

2.5K

Publications

115.3K

Citations

8.5K

Authors

1.1K

Institutions

Publications per year

2017–2026

489

Parents

Publications

2.5K

Resistive switching in transition metal oxides

Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text

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Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

Tsuyoshi Sekitani, Tomoyuki Yokota, Ute Zschieschang et al. · Science · 2009 · 957 citations

, , +17

The mechanism of electroforming of metal oxide memristive switches

J. Joshua Yang, Feng Miao, Matthew D. Pickett et al. · Nanotechnology · 2009 · 851 citations

, , +17

Introduction to flash memory

R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 822 citations

, , +17

Time interleaved converter arrays

W.C. Black, D.A. Hodges · IEEE Journal of Solid-State Circuits · 1980 · 822 citations

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1–5 of 2.5K

Authors

8.5K

  1. OM
    Onur Mutlu

    Carnegie Mellon University, United States

    28 publications · 3.7K citations

    25

    h-index

  2. TK
    Tei‐Wei Kuo

    National Taiwan University, Taiwan

    57 publications · 2.8K citations

    25

    h-index

  3. KT
    Ken Takeuchi

    Chuo University, Japan

    42 publications · 2.2K citations

    22

    h-index

  4. ZS
    Zili Shao

    Hong Kong Polytechnic University, Hong Kong SAR China

    37 publications · 1.1K citations

    22

    h-index

  5. YC
    Yuan-Hao Chang

    National Taiwan University, Taiwan

    45 publications · 1.3K citations

    21

    h-index

1–5 of 8.5K

Institutions

1.1K

  1. Samsung (South Korea)

    Seoul, South Korea

    53 h-index

    1.5K publications

    80.9K citations

  2. Seoul National University

    Seoul, South Korea

    39 h-index

    564 publications

    21.6K citations

  3. Toshiba (Japan)

    Tokyo, Japan

    37 h-index

    805 publications

    45.3K citations

  4. Korea Advanced Institute of Science and Technology

    Daejeon, South Korea

    31 h-index

    305 publications

    15.2K citations

  5. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    28 h-index

    168 publications

    9K citations

  6. Intel (United States)

    Santa Clara, United States

    28 h-index

    323 publications

    17.3K citations

  7. Sungkyunkwan University

    Seoul, South Korea

    27 h-index

    146 publications

    9.1K citations

  8. National Taiwan University

    Taipei, Taiwan

    26 h-index

    179 publications

    8.1K citations

1–8 of 1.1K

Venues

  1. IEEE Transactions on Electron Devices

    124 publications · 3.8K citations

    35

    h-index

  2. IEEE Journal of Solid-State Circuits

    77 publications · 4.3K citations

    34

    h-index

  3. IEEE Electron Device Letters

    94 publications · 4K citations

    31

    h-index

  4. IEEE Transactions on Computers

    47 publications · 1.6K citations

    22

    h-index

  5. IEEE Transactions on Consumer Electronics

    57 publications · 2.5K citations

    22

    h-index

1–5