Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

Secondary ion quadrupole mass spectrometer for depth profiling—design and performance evaluation

C. W. Magee, William L. Harrington, Richard E. Honig · Review of Scientific Instruments · 1978 · 144 citations

Natural Sciences, Chemistry, Analytical Chemistry +15

Generalized Model for the Clustering of As Dopants in Si

E. Guerrero, H. Pötzl, R. Tielert et al. · Journal of The Electrochemical Society · 1982 · 83 citations

Natural Sciences, Materials Science, Physics +16

Evaluation of a cesium primary ion source on an ion microprobe mass spectrometer

Peter Williams, Ruthan Lewis, C. A. Evans et al. · Analytical Chemistry · 1977 · 82 citations

Natural Sciences, Chemistry, Analytical Chemistry +7

Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized Si

T. J. Magee, C. Leung, H. Kawayoshi et al. · Applied Physics Letters · 1981 · 21 citations

Engineering, Materials Engineering, Materials Science +17