Concepedia

Dopant Redistribution

Dopant Redistribution is a semiconductor fabrication phenomenon in which dopant atoms within a material are displaced from their original implanted positions due to thermal or kinetic effects during processing, thereby altering the intended doping profile.

152

Publications

4.9K

Citations

596

Authors

192

Institutions

Publications per year

2017–2026

9

Parents

Publications

152

Delta doping of III–V compound semiconductors: Fundamentals and device applications

E. F. Schubert · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 296 citations

, , +17

Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed silicon

J. C. Wang, R. F. Wood, P. P. Pronko · Applied Physics Letters · 1978 · 148 citations

, , +17

Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges

G. Hobler · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 129 citations

, , +11

Reverse short-channel effects on threshold voltage in submicrometer salicide devices

C.-Y. Lu, J.M. Sung · IEEE Electron Device Letters · 1989 · 96 citations

, , +16

Macroscopic theory of pulsed-laser annealing. III. Nonequilibrium segregation effects

R. F. Wood · Physical review. B, Condensed matter · 1982 · 85 citations

, , +17

1–5 of 152

Authors

596

  1. RA
    R. A. Powell

    Varian Medical Systems (United States), United States

    8 publications · 206 citations

    8

    h-index

  2. EL
    E. L. Pankratov

    Nizhny Novgorod State University of Architecture and Civil Engineering, Russia

    6 publications · 143 citations

    6

    h-index

  3. SJ
    S. J. Pearton

    University of Florida, United States

    5 publications · 207 citations

    5

    h-index

  4. RT
    R. T. Fulks

    Palo Alto Research Center, United States

    5 publications · 207 citations

    5

    h-index

  5. RH
    Robert H. Chow

    University of Southern California, United States

    4 publications · 83 citations

    4

    h-index

1–5 of 596

Institutions

192

  1. Varian Medical Systems (United States)

    Palo Alto, United States

    9 h-index

    22 publications

    745 citations

  2. University of Florida

    Gainesville, United States

    7 h-index

    18 publications

    576 citations

  3. AT&T (United States)

    Bedminster, United States

    6 h-index

    16 publications

    955 citations

  4. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    5 h-index

    16 publications

    428 citations

  5. Oak Ridge National Laboratory

    Oak Ridge, United States

    5 h-index

    11 publications

    848 citations

  6. Institute for Microelectronics and Microsystems

    Catania, Italy

    5 h-index

    28 publications

    1.3K citations

  7. Siemens (Germany)

    Munich, Germany

    5 h-index

    9 publications

    348 citations

  8. KTH Royal Institute of Technology

    Stockholm, Sweden

    4 h-index

    12 publications

    208 citations

1–8 of 192

Venues

  1. Applied Physics Letters

    26 publications · 983 citations

    19

    h-index

  2. Journal of Applied Physics

    25 publications · 795 citations

    18

    h-index

  3. Journal of The Electrochemical Society

    JES · 15 publications · 372 citations

    11

    h-index

  4. 5

    h-index

  5. IEEE Transactions on Electron Devices

    5 publications · 158 citations

    5

    h-index

1–5