Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed silicon

Abstract

Experimentally observed laser-induced redistributions of ion-implanted dopants in silicon are explained theoretically in terms of diffusion in the molten state. Calculations of thermal and mass diffusion in silicon show that the redistribution of a dopant file after pulsed-laser annealing is dependent on the time the dopant region remains molten and on the value of the mass-diffusion coefficient for the particular dopant.