Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized Si

Abstract

Redistribution and gettering of mobile oxygen into damage regions of As-implanted (111) Si have been investigated using transmission electron microscopy and secondary ion mass spectrometry profiling. Rapid motion and gettering of 16O into near-surface regions and zones at depths ≃RP have been shown to occur during and subsequent to solid-phase regrowth of the amorphous layer. The presence of residual defects in the form of twinning zones, stacking faults, and dislocation lines serves to provide effective pinning sites for SiOx nucleation and produce increased gettering of oxygen during secondary annealing.