R. Ormond - Concepedia

Author

R. Ormond

Evans Analytical Group (United States)

Also Known As

R. D. Ormond, R. ORMOND, R. Ormond, R.D. Ormond, Robert D. Ormond, Robert Ormond

Publications

460

Citations

H-Index

Concepts

All Affiliations

Evans Analytical Group (United States)Advanced Applications (United States)

About

R. Ormond is an author at Evans Analytical Group (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	357
2	Applied Physics	13	14	357
3	Electrical Engineering	8	8	156
4	Materials Engineering	4	4	106
5	Medicine	1	1	15

R. Ormond

Publications

391

Citations

H-Index

Page 1

	Year	Citations
cw laser recrystallization of 〈100〉 Si on amorphous substrates J. F. Gibbons, K. F. Lee, T. J. Magee, Applied Physics Letters Materials ScienceLaser ScanOptical MaterialsEngineeringCrystalline Defects	1979	83
Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy T. H. Myers, J. F. Schetzina, T. J. Magee, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringThin Film Process TechnologySemiconductorsIi-vi SemiconductorB Cdte	1983	45
Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing T. J. Magee, H. Kawayoshi, R. Ormond, Applied Physics Letters Materials ScienceElectrical EngineeringIon ImplantationEngineeringEpitaxial Growth	1981	33
Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates G. R. Woolhouse, T. J. Magee, H. Kawayoshi, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringInterfacial RegionsDefect ToleranceIi-vi SemiconductorNanoelectronics	1985	25
Solid-phase epitaxial regrowth of ion-implanted layers in GaAs Y. I. Nissim, L. A. Christel, T. W. Sigmon, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringIon ImplantationDamage Density	1981	24
Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing T. J. Magee, L. J. Palkuti, R. Ormond, Applied Physics Letters Materials ScienceCw Laser AnnealingEpitaxial GrowthSingle-crystal Si SheetsEngineering	1981	23
Thermal redistribution of oxygen during solid-phase regrowth of arsenic-implanted amorphized Si T. J. Magee, C. Leung, H. Kawayoshi, Applied Physics Letters Materials ScienceIon ImplantationEngineeringCrystalline DefectsSiox Nucleation	1981	21
Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAs T. J. Magee, K. S. Lee, R. Ormond, Applied Physics Letters	1980	20
Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stress T. J. Magee, K. S. Lee, R. Ormond, Applied Physics Letters EngineeringLow-temperature RedistributionIon ImplantationRf SemiconductorBoron-implanted Gaas	1980	19
Annealing of Hg1−<i>x</i>Cd<i>x</i>Te: Hg loss rates and annealing of ion implantation damage K. C. Dimiduk, W. G. Opyd, J. F. Gibbons, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringIon ImplantationOptical MaterialsHigh Temperature Materials	1983	17

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