Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

Abstract

The origins of microstructural defects in HgCdTe epilayers grown on CdTe are reviewed. In particular the role played by lattice parameter misfit and interdiffusion in the generation of misfit dislocations is considered. Two approaches to the improvement of epilayers through the use of alternate substrates are described and examples illustrating the potential and current problems in growth of HgCdTe/CdTeSe, HgCdTe/ZnCdTe, and CdTe/GaAs systems are discussed.