D.S. Day

Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon

M. Y. Tsai, D.S. Day, B. G. Streetman et al. · Journal of Applied Physics · 1979 · 110 citations

Materials Engineering, Materials Science, Fluorine Collects +13

Deep-level-transient spectroscopy: System effects and data analysis

D.S. Day, M. Y. Tsai, B. G. Streetman et al. · Journal of Applied Physics · 1979 · 89 citations

Boxcar Averager, Electrical Engineering, Engineering +10

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

T. J. Magee, H. Kawayoshi, R. Ormond et al. · Applied Physics Letters · 1981 · 33 citations

Materials Science, Electrical Engineering, Ion Implantation +15

The effect of climatic housing and level of nutrition on the performance of calves

P. E. V. Williams, D.S. Day, A. M. Raven et al. · Animal Science · 1981 · 27 citations

Nutrition, Milk Replacer, Agricultural Economics +18

Electron traps created by high temperature annealing in MBE n-GaAs

D.S. Day, J. D. Oberstar, T. J. Drummond et al. · Journal of Electronic Materials · 1981 · 27 citations

Electrical Engineering, Engineering, Physics +5