M. Y. Tsai - Concepedia

Author

M. Y. Tsai

IBM Research - Thomas J. Watson Research Center

Also Known As

M. Tsai, M. Y. Tsai, M.Y. Tsai, Mon Tsai

Publications

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center University of Illinois Urbana-Champaign IBM (United States)

About

M. Y. Tsai is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	14	1K
2	Applied Physics	11	11	900
3	Natural Sciences	2	2	225
4	Biomedical Engineering	1	1	19
5	Chemical Engineering	1	1	19

M. Y. Tsai

Publications

Citations

H-Index

Page 1

	Year	Citations
Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+ M. Y. Tsai, B. G. Streetman Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1979	174
Shallow junctions by high-dose As implants in Si: experiments and modeling M. Y. Tsai, F. F. Morehead, J. E. E. Baglin, Journal of Applied Physics Shallow JunctionsHigh ConductivityEngineeringIntegrated CircuitsSilicon On Insulator	1980	169
Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects F. M. d’Heurle, C. S. Petersson, M. Y. Tsai Journal of Applied Physics EngineeringChemistrySilicon On InsulatorIi-vi SemiconductorIon Implantation	1980	136
Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon M. Y. Tsai, D.S. Day, B. G. Streetman, Journal of Applied Physics Materials EngineeringMaterials ScienceFluorine CollectsFluorine OccursEngineering	1979	110
Deep-level-transient spectroscopy: System effects and data analysis D.S. Day, M. Y. Tsai, B. G. Streetman, Journal of Applied Physics Boxcar AveragerElectrical EngineeringEngineeringPhysicsNatural Sciences	1979	89
Properties of tungsten silicide film on polycrystalline silicon M. Y. Tsai, F. M. d’Heurle, C. S. Petersson, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringNanoelectronics	1981	67
Refractory metal silicide formation induced by As+ implantation M. Y. Tsai, C. S. Petersson, F. M. d’Heurle, Applied Physics Letters EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductorsIon Implantation	1980	65
Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted silicon M. Y. Tsai, B. G. Streetman, Peter Williams, Applied Physics Letters Engineering°C AnnealingSilicon On InsulatorBoropheneSemiconductors	1978	59
One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology M. Y. Tsai, H. H. Chao, L. M. Ephrath, Journal of The Electrochemical Society Electrical EngineeringEngineeringVlsi DesignMicrofabricationApplied Physics	1981	53
Gallium distribution and electrical activation in Ga+-implanted Si M. Y. Tsai, B. G. Streetman, V. R. Deline, Journal of Electronic Materials Electrical EngineeringIon ImplantationEngineeringApplied PhysicsGallium Oxide	1979	23

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