M. Y. Tsai

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

M. Y. Tsai, B. G. Streetman · Journal of Applied Physics · 1979 · 174 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Shallow junctions by high-dose As implants in Si: experiments and modeling

M. Y. Tsai, F. F. Morehead, J. E. E. Baglin et al. · Journal of Applied Physics · 1980 · 169 citations

Shallow Junctions, High Conductivity, Engineering +17

Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effects

F. M. d’Heurle, C. S. Petersson, M. Y. Tsai · Journal of Applied Physics · 1980 · 136 citations

Engineering, Chemistry, Silicon On Insulator +17

Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon

M. Y. Tsai, D.S. Day, B. G. Streetman et al. · Journal of Applied Physics · 1979 · 110 citations

Materials Engineering, Materials Science, Fluorine Collects +13

Deep-level-transient spectroscopy: System effects and data analysis

D.S. Day, M. Y. Tsai, B. G. Streetman et al. · Journal of Applied Physics · 1979 · 89 citations

Boxcar Averager, Electrical Engineering, Engineering +10