B. G. Streetman - Concepedia

Author

B. G. Streetman

Also Known As

B G Streetman, B. G. STREETMAN, B. G. Streetman, B. Streetman, B.G Streetman, B.G. Streetman, Ben G. Streetman, Ben Streetman, Y.C. Shih

337

Publications

Citations

H-Index

111

Concepts

All Affiliations

The University of Texas at Austin University of Illinois Urbana-Champaign

About

B. G. Streetman is an author at The University of Texas at Austin specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	151	5.5K
2	Applied Physics	38	143	5.2K
3	Natural Sciences	12	14	363
4	Medicine	1	1	15
5	Biomedical Engineering	1	1	19

B. G. Streetman

160

Publications

5.7K

Citations

H-Index

Page 1

	Year	Citations
Negative differential resistance through real-space electron transfer K. Hess, H. Morkoç̌, H. Shichijo, Applied Physics Letters Electrical EngineeringConduction ParallelEngineeringPhysicsNanoelectronics	1979	299
Electric field enhanced emission from non-Coulombic traps in semiconductors Patrick Martin, B. G. Streetman, K. Hess Journal of Applied Physics EngineeringGlow DischargeElectric Field EnhancementCharge TransportElectromagnetic Compatibility	1981	223
Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+ M. Y. Tsai, B. G. Streetman Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1979	174
A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes Peng Yuan, K.A. Anselm, Chang‐Ping Hu, IEEE Transactions on Electron Devices Local Electric FieldElectrical EngineeringEngineeringPhysicsElectronic Engineering	1999	152
Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz C. Lenox, Hui Nie, Peng Yuan, IEEE Photonics Technology Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringHigh Unity-gain BandwidthEngineering	1999	151
Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses Peng Yuan, C.C. Hansing, K.A. Anselm, IEEE Journal of Quantum Electronics EngineeringSemiconductor DeviceSemiconductorsIon ImplantationRf Semiconductor	2000	119
Noise characteristics of thin multiplication region GaAs avalanche photodiodes Chang‐Ping Hu, K.A. Anselm, B. G. Streetman, Applied Physics Letters Noise CharacteristicsElectrical EngineeringEngineeringPhysicsElectronic Engineering	1996	115
Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon M. Y. Tsai, D.S. Day, B. G. Streetman, Journal of Applied Physics Materials EngineeringMaterials ScienceFluorine CollectsFluorine OccursEngineering	1979	110
Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture Diana L. Huffaker, O. Baklenov, Lancelot Graham, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceCavity QedLaser Applications	1997	96
Deep-level-transient spectroscopy: System effects and data analysis D.S. Day, M. Y. Tsai, B. G. Streetman, Journal of Applied Physics Boxcar AveragerElectrical EngineeringEngineeringPhysicsNatural Sciences	1979	89

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