Concepedia

Dopant Defects

Dopant Defects is a type of point defect in crystalline materials wherein foreign atoms introduced into the host lattice create localized deviations in atomic arrangement and electronic structure, distinct from intrinsic defects by originating from deliberate impurity doping to modify material properties.

245

Publications

12.2K

Citations

967

Authors

371

Institutions

Publications per year

2017–2026

40

Parents

Publications

245

Anisotropic Ferromagnetism in Substituted Zinc Oxide

M. Venkatesan, C. B. Fitzgerald, J. G. Lunney et al. · Physical Review Letters · 2004 · 1K citations · Full text

, , +14

Role of hydrogen in doping of GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 339 citations

, , +17

First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe

Chris G. Van de Walle, David B. Laks, G. F. Neumark et al. · Physical review. B, Condensed matter · 1993 · 322 citations

, , +17

Formation Mechanism of Nanotubes in GaN

Z. Liliental‐Weber, Y. Chen, S. Ruvimov et al. · Physical Review Letters · 1997 · 318 citations

, , +15

Dopant and defect energetics: Si in GaAs

John E. Northrup, Shengbai Zhang · Physical review. B, Condensed matter · 1993 · 291 citations

, , +17

1–5 of 245

Authors

967

  1. AC
    A. Chroneos

    Imperial College London, United Kingdom

    8 publications · 343 citations

    8

    h-index

  2. AU
    Akira Uedono

    University of Tsukuba, Japan

    6 publications · 115 citations

    6

    h-index

  3. ZL
    Z. Liliental‐Weber

    Lawrence Berkeley National Laboratory, United States

    6 publications · 538 citations

    6

    h-index

  4. NK
    Navaratnarajah Kuganathan

    Imperial College London, United Kingdom

    5 publications · 86 citations

    5

    h-index

  5. PE
    Ph. Ebert

    Forschungszentrum Jülich, Germany

    5 publications · 140 citations

    5

    h-index

1–5 of 967

Institutions

371

  1. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    66 publications

    2.4K citations

  2. Palo Alto Research Center

    Palo Alto, United States

    8 h-index

    17 publications

    2.9K citations

  3. Imperial College London

    London, United Kingdom

    8 h-index

    20 publications

    990 citations

  4. University of Tsukuba

    Tsukuba, Japan

    7 h-index

    25 publications

    426 citations

  5. Lawrence Berkeley National Laboratory

    Berkeley, United States

    7 h-index

    20 publications

    2K citations

  6. National Institute for Materials Science

    Tsukuba, Japan

    7 h-index

    13 publications

    430 citations

  7. University of Florida

    Gainesville, United States

    7 h-index

    16 publications

    823 citations

  8. The University of Texas at Austin

    Austin, United States

    6 h-index

    12 publications

    634 citations

1–8 of 371

Venues

  1. Applied Physics Letters

    24 publications · 1.4K citations

    18

    h-index

  2. Journal of Applied Physics

    21 publications · 674 citations

    16

    h-index

  3. Physical review. B, Condensed matter

    PRB · 11 publications · 1.3K citations

    10

    h-index

  4. Physical Review Letters

    PRL · 8 publications · 1.9K citations

    8

    h-index

  5. Journal of Crystal Growth

    8 publications · 166 citations

    8

    h-index

1–5