Semiconductors · 2019 · 10 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationDopingHigh-frequency Semiconductor DevicesSemiconductor PhysicsWide-bandgap SemiconductorsCharge ControlGallium Nitride (Gan) MaterialsGan-based High-frequency DevicesHeterostructure Device ModelingHigh-electron-mobility TransistorsHigh-frequency ElectronicsMicrowave DevicesMicrowave Transistors
A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.
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AlGaN/AlN/GaN high-power microwave HEMT
L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations