Monika Bhattacharya

An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMT

Monika Bhattacharya, Jyotika Jogi, R.S. Gupta et al. · IEEE Transactions on Electron Devices · 2012 · 19 citations

Engineering, Electrical Engineering, Electronic Materials +16

Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

Nisha Chugh, Monika Bhattacharya, Manoj Kumar et al. · Journal of Computational Electronics · 2018 · 17 citations

Engineering, Electrical Engineering, Materials Science +16

Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications

Nisha Chugh, Manoj Kumar, Subhasis Haldar et al. · Silicon · 2021 · 17 citations

Engineering, Electrical Engineering, Materials Science +16

Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications

Monika Bhattacharya, Jyotika Jogi, R.S. Gupta et al. · Solid-State Electronics · 2011 · 12 citations

Engineering, Electrical Engineering, Materials Science +14

Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

Nisha Chugh, Manoj Kumar, Monika Bhattacharya et al. · Microsystem Technologies · 2019 · 10 citations

Engineering, Electrical Engineering, Materials Science +16