Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide - Concepedia

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Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

11

Citations

36

References

2018

Year

Hyun‐Seop Kim, Su‐Keun Eom, Kwang-Seok Seo, Hyungtak Kim, Ho‐Young Cha

References

	Year	Citations

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