Nitride-based semiconductors for blue and green light-emitting devices

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

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Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

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