Concepedia

Author

Hyun‐Seop Kim

Hongik UniversityORCID

Also Known As

Hyun-Seop Kim, Hyun‐Seop Kim

31

Publications

293

Citations

10

H-Index

12

Concepts

All Affiliations

Hongik UniversitySeoul National UniversityThe University of Texas at DallasYonsei UniversityUniversity of Bristol
HK

About

Hyun‐Seop Kim is an author at Hongik University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

5

5

137

2

Applied Physics

5

5

137

3

Electrical Engineering

4

4

112

4

Materials Science

3

3

53

5

Electronic Devices

1

1

17

Hyun‐Seop Kim

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12

Publications

232

Citations

10

H-Index

YearCitations

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Hyun‐Seop Kim, Sangwoo Han, Won-Ho Jang,

IEEE Electron Device Letters

2017

48

High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

Jae-Gil Lee, Hyun‐Seop Kim, Kwang-Seok Seo,

Solid-State Electronics

2016

36

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Hyun‐Seop Kim, Myoung‐Jin Kang, Jeong Jin Kim,

Materials

2020

27

Atomic-layer deposition of crystalline BeO on SiC

Seung Min Lee, Yoonseo Jang, Jongho Jung,

Applied Surface Science

2018

25

Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer

Jae-Gil Lee, Hyun‐Seop Kim, Donghwan Kim,

Semiconductor Science and Technology

2015

17

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO <i> <sub>x</sub> </i> N <i> <sub>y</sub> </i> gate insulator

Myoung‐Jin Kang, Su‐Keun Eom, Hyun‐Seop Kim,

Semiconductor Science and Technology

2019

13

Turn-On Voltage Instability of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Trench Schottky Barrier Diodes With Different Fin Channel Orientations

Hyun‐Seop Kim, Aditya K. Bhat, Matthew D. Smith,

IEEE Transactions on Electron Devices

2024

13

Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere

Jae-Gil Lee, Hyun‐Seop Kim, Jungyeon Lee,

Semiconductor Science and Technology

2015

11

Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

Hyun‐Seop Kim, Su‐Keun Eom, Kwang-Seok Seo,

Vacuum

2018

11

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Chan-Hee Jang, Hyun‐Seop Kim, Hyungtak Kim,

Materials

2022

11

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