Hyun‐Seop Kim

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Hyun‐Seop Kim, Sangwoo Han, Won-Ho Jang et al. · IEEE Electron Device Letters · 2017 · 48 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

Jae-Gil Lee, Hyun‐Seop Kim, Kwang-Seok Seo et al. · Solid-State Electronics · 2016 · 36 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +5

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Hyun‐Seop Kim, Myoung‐Jin Kang, Jeong Jin Kim et al. · Materials · 2020 · 27 citations · Full text

Atomic-layer deposition of crystalline BeO on SiC

Seung Min Lee, Yoonseo Jang, Jongho Jung et al. · Applied Surface Science · 2018 · 25 citations · Full text

Materials Science, Engineering, Applied Physics +3

Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer

Jae-Gil Lee, Hyun‐Seop Kim, Donghwan Kim et al. · Semiconductor Science and Technology · 2015 · 17 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +13