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High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceRecessed Mos-gate