Kwang-Seok Seo

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

Jae-Gil Lee, Bong-Ryeol Park, Chun-Hyung Cho et al. · IEEE Electron Device Letters · 2013 · 118 citations

Electrical Engineering, Engineering, High Voltage Engineering +9

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

Woojin Choi, Ogyun Seok, Ho Jin Ryu et al. · IEEE Electron Device Letters · 2014 · 112 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +17

Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications

Dae‐Hyun Kim, Jesús A. del Alamo, Jae‐Hak Lee et al. · IEEE Transactions on Electron Devices · 2007 · 82 citations

Engineering, Vlsi Design, Integrated Circuits +18

Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

Woojin Choi, Ho Jin Ryu, Namcheol Jeon et al. · IEEE Electron Device Letters · 2014 · 67 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

Bong-Ryeol Park, Jae-Gil Lee, Woojin Choi et al. · IEEE Electron Device Letters · 2013 · 54 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12