Ogyun Seok

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

Woojin Choi, Ogyun Seok, Ho Jin Ryu et al. · IEEE Electron Device Letters · 2014 · 112 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +17

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO₂ gate insulators

Ogyun Seok, Woojin Ahn, Min‐Koo Han et al. · Semiconductor Science and Technology · 2012 · 34 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Hyoung Woo Kim, Ogyun Seok, Jeong Hyun Moon et al. · Japanese Journal of Applied Physics · 2017 · 14 citations · Full text

µM Long Cpl, Semiconductor Technology, Electrical Engineering +13

High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

Young-Shil Kim, Jiyong Lim, Ogyun Seok et al. · 2011 · 13 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Micro-trench free 4H-SiC etching with improved SiC/SiO _<b>2</b> selectivity using inductively coupled SF _<b>6</b> /O _<b>2</b> /Ar plasma

Ogyun Seok, Youngjo Kim, Wook Bahng · Physica Scripta · 2019 · 13 citations