Myoung‐Jin Kang

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

B. S. Kang, F. Ren, Myoung‐Jin Kang et al. · Applied Physics Letters · 2005 · 34 citations

Engineering, Chemistry, Chemical Engineering +19

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Hyun‐Seop Kim, Myoung‐Jin Kang, Jeong Jin Kim et al. · Materials · 2020 · 27 citations · Full text

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN<i> _x </i> MIS structure

Myoung‐Jin Kang, Minseong Lee, Gwangho Choi et al. · physica status solidi (a) · 2017 · 14 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +10

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO <i> _x </i> N <i> _y </i> gate insulator

Myoung‐Jin Kang, Su‐Keun Eom, Hyun‐Seop Kim et al. · Semiconductor Science and Technology · 2019 · 13 citations

High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

Il‐Hwan Hwang, Su‐Keun Eom, Gwangho Choi et al. · physica status solidi (a) · 2017 · 12 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10