Su‐Keun Eom

A Compact 30-W AlGaN/GaN HEMTs on Silicon Substrate With Output Power Density of 8.1 W/mm at 8 GHz

Minseong Lee, Donghwan Kim, Su‐Keun Eom et al. · IEEE Electron Device Letters · 2014 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +10

Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure

Donghwan Kim, Hongjong Park, Su‐Keun Eom et al. · IEEE Electron Device Letters · 2018 · 14 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO <i> _x </i> N <i> _y </i> gate insulator

Myoung‐Jin Kang, Su‐Keun Eom, Hyun‐Seop Kim et al. · Semiconductor Science and Technology · 2019 · 13 citations

High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

Il‐Hwan Hwang, Su‐Keun Eom, Gwangho Choi et al. · physica status solidi (a) · 2017 · 12 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

Hyun‐Seop Kim, Su‐Keun Eom, Kwang-Seok Seo et al. · Vacuum · 2018 · 11 citations