2015 · 10 citations · 8 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDesign For TestabilityDevice CharacterizationDevice ReliabilityIntegrated Circuit DevicesSemiconductor Device MaterialsSemiconductor ReliabilityHigh-temperature ElectronicsHigh-temperature TestingOn-wafer Measurement TechniquesParallel SystemPower Electronics DevicesSilicon Carbide Power ElectronicsSystem ReliabilityThermal Testing
This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration compared to SiO2 on Si.
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