Jason T. Ryan

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, Joel Barnett et al. · Journal of Applied Physics · 2006 · 151 citations

Materials Science, Electrical Engineering, Semiconductor Device +15

Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

Z. Chbili, Asahiko Matsuda, Jaafar Chbili et al. · IEEE Transactions on Electron Devices · 2016 · 88 citations

Engineering, Root Cause, Sic Power Mosfets +19

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric

G. Bersuker, Dawei Heh, Chadwin D. Young et al. · 2008 · 73 citations · Full text

Gate Stack Degradation, Electrical Engineering, Engineering +15

Thermomechanical properties of 1C molding compounds

H. E. Bair, D. J. Boyle, Jason T. Ryan et al. · Polymer Engineering and Science · 1990 · 50 citations

Transfer Molding, Thermomechanical Properties, Engineering +18

Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

Jason T. Ryan, Patrick M. Lenahan, Tibor Grasser et al. · Applied Physics Letters · 2010 · 47 citations · Full text

Spintronics, Magnetism, Spin Dynamic +15