Jason T. Ryan - Concepedia

Author

Jason T. Ryan

National Institute of Standards and Technology ORCID

Also Known As

J. Ryan, J. T. Ryan, J.T Ryan, J.T. Ryan, Jason Ryan, Jason T Ryan, Jason T. Ryan, Jason Thomas Ryan, Ryan, Jason T.

121

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

National Institute of Standards and Technology Pennsylvania State University Theiss Research University of Maryland, College Park Old Dominion University

About

Jason T. Ryan is an author at National Institute of Standards and Technology specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	812
2	Applied Physics	14	18	678
3	Health Sciences	1	1	18
4	Medicine	1	1	25
5	Natural Sciences	1	1	13

Jason T. Ryan

Publications

940

Citations

H-Index

Page 1

	Year	Citations
The effect of interfacial layer properties on the performance of Hf-based gate stack devices G. Bersuker, C. S. Park, Joel Barnett, Journal of Applied Physics Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringSio2 Interfacial Layer	2006	151
Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs Z. Chbili, Asahiko Matsuda, Jaafar Chbili, IEEE Transactions on Electron Devices EngineeringRoot CauseSic Power MosfetsPower ElectronicsGate Oxide	2016	88
Breakdown in the metal/high-k gate stack: Identifying the &#x201C;weak link&#x201D; in the multilayer dielectric G. Bersuker, Dawei Heh, Chadwin D. Young, Gate Stack DegradationElectrical EngineeringEngineeringCrystalline DefectsMultilayer Dielectric	2008	73
Thermomechanical properties of 1C molding compounds H. E. Bair, D. J. Boyle, Jason T. Ryan, Polymer Engineering and Science Transfer MoldingThermomechanical PropertiesEngineeringMechanical EngineeringSilicon On Insulator	1990	50
Observations of negative bias temperature instability defect generation via on the fly electron spin resonance Jason T. Ryan, Patrick M. Lenahan, Tibor Grasser, Applied Physics Letters SpintronicsMagnetismSpin DynamicEngineeringPhysics	2010	47
Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks G. Bersuker, Chang Seo Park, Huang-Chun Wen, IEEE Transactions on Electron Devices Gate StacksFlatband-voltage Roll-off PhenomenonElectrical EngineeringElectronic DevicesOxygen Vacancies	2010	42
Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices Jason T. Ryan, Patrick M. Lenahan, A.Y. Kang, IEEE Transactions on Nuclear Science EngineeringOxygen Vacancy CenterAtomic Scale DefectsSilicon On InsulatorDefect Tolerance	2005	41
Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures Jason T. Ryan, Patrick M. Lenahan, G. Bersuker, Applied Physics Letters EngineeringMagnetic ResonanceSpintronic MaterialSilicon On InsulatorMagnetism	2007	37
Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors Brad C. Bittel, Patrick M. Lenahan, Jason T. Ryan, Applied Physics Letters SpintronicsElectrical EngineeringMagnetismPoint DefectsEngineering	2011	35
Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis Vasileia Georgiou, Dmitry Veksler, J. P. Campbell, Advanced Functional Materials	2018	29

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