Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

Moshe Gurfinkel, Hao Xiong, Kin P. Cheung et al. · IEEE Transactions on Electron Devices · 2008 · 124 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices

Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum · 2006 · 90 citations

Engineering, Semiconductor Device, Nanoelectronics +17

High temperature gate-bias and reverse-bias tests on SiC MOSFETs

Li Yang, Alberto Castellazzi · Microelectronics Reliability · 2013 · 60 citations

Electrical Engineering, Engineering, Bias Temperature Instability +4

Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode

Masao Uchida, Nobuyuki Horikawa, Kenichiro Tanaka et al. · 2011 · 60 citations

Electrical Engineering, Internal Diode, Engineering +8

Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

T. Okayama, S. D. Arthur, J. L. Garrett et al. · Solid-State Electronics · 2007 · 58 citations

Semiconductor Technology, Electrical Engineering, Engineering +8