Power Device Reliability
Power Device Reliability is a performance metric that quantifies the ability of semiconductor power devices to consistently perform their designated electrical functions under specified conditions over time without degradation or failure, distinguishing it from related metrics by focusing specifically on the operational lifespan and failure mechanisms of power electronic components in electric vehicle applications.
613
Publications
31.4K
Citations
2.1K
Authors
558
Institutions
Publications per year
2017–2026
225
613
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices · 2017 · 1.6K citations
Fast power cycling test of IGBT modules in traction application
Martin Held, P. Jacob, G. Nicoletti et al. · 2002 · 565 citations
1–5 of 613
2.1K
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558
Aalborg University
Aalborg, Denmark
29 h-index
191 publications
12.1K citations

Centre National de la Recherche Scientifique
Paris, France
13 h-index
38 publications
920 citations
Infineon Technologies (Germany)
Munich, Germany
13 h-index
25 publications
1.9K citations

DEVCOM Army Research Laboratory
Adelphi, United States
11 h-index
27 publications
2.5K citations
Texas Instruments (United States)
Dallas, United States
11 h-index
24 publications
1.2K citations
Virginia Tech
Blacksburg, United States
11 h-index
41 publications
1.6K citations

University of Nottingham
Nottingham, United Kingdom
10 h-index
31 publications
1.1K citations

Chongqing University
Chongqing, China
10 h-index
35 publications
1.1K citations
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38 publications · 3.8K citations
28
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70 publications · 3.5K citations
27
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26 publications · 2.9K citations
19
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17 publications · 3.1K citations
14
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MSF · Book series · 14 publications · 364 citations
12
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1–5