P. Jacob

Fast power cycling test of IGBT modules in traction application

Martin Held, P. Jacob, G. Nicoletti et al. · 2002 · 565 citations

Engineering, Electrical Engineering, Microelectronics +15

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell

Scott E. Thompson, N. Anand, M Armstrong et al. · 2003 · 243 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

S. Tyagi, Morteza S. Alavi, R. Bigwood et al. · 2002 · 150 citations

Engineering, Computer Engineering, Electrical Engineering +13

Fast power cycling test for insulated gate bipolar transistor modules in traction application

Martin Held, P. Jacob, G. Nicoletti et al. · International Journal of Electronics · 1999 · 77 citations

Engineering, Electrical Engineering, Microelectronics +16

Investigation on the long term reliability of power IGBT modules

Wuchen Wu, Martin Held, P. Jacob et al. · 2002 · 74 citations

Engineering, Electrical Engineering, Materials Science +17