IEEE Transactions on Nuclear Science · 2000 · 24 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ScalingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor ReliabilityChannel Length ScalingDevice Scaling EffectsEquivalent Oxide ThicknessGate Oxide Thickness EffectsLeakageLeakage Current ReductionMetal-oxide-semiconductor Field-effect Transistor ModelingTechnology Scaling
A new 2D-self-consistent code has been developed and is applied to the understanding of charge trapping in SOI buried oxides and its effect on back-channel MOS leakage in SOI transistors. 2D effects, field-collapse and field-enhancement are observed. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. In thinner oxides, 2D effects are observed for example, the onset of back-channel leakage current is found to be related to the ratio of the channel length on the oxide thickness.
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