IEEE Transactions on Nuclear Science · 1991 · 44 citations · 12 references
EngineeringOxidation ResistanceChemistryCharge TransportLow FieldsChemical EngineeringIon ImplantationCharge SeparationTrapped HolesElectrode Reaction MechanismElectrical EngineeringPhysicsOxide ElectronicsAtomic PhysicsMicroelectronicsCharge BuildupElectrochemistryRepresentative SimoxHigh DoseNatural SciencesApplied Physics
Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, epsilon /sub ox/, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of epsilon /sub ox/ and recombination of electrons with trapped holes in low-field regions of the oxide.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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