J.L. Leray

Worst-case bias during total dose irradiation of SOI transistors

V. Ferlet-Cavrois, T. Colladant, Philippe Paillet et al. · IEEE Transactions on Nuclear Science · 2000 · 134 citations · Full text

Electrical Engineering, Charge Trapping, Total Dose Irradiation +7

Impact of ion energy on single-event upset

P.E. Dodd, O. Musseau, M.R. Shaneyfelt et al. · IEEE Transactions on Nuclear Science · 1998 · 90 citations

Electrical Engineering, Engineering, Vlsi Design +10

CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)

J.L. Leray, E. Dupont-Nivet, J.F. Pere et al. · IEEE Transactions on Nuclear Science · 1990 · 74 citations

Engineering, Oxide Recovery, Computer Architecture +16

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

J.R. Schwank, M.R. Shaneyfelt, P.E. Dodd et al. · IEEE Transactions on Nuclear Science · 2000 · 72 citations · Full text

Materials Science, Electrical Engineering, Ion Implantation +15

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

J.L. Leray, E. Dupont-Nivet, O. Musseau et al. · IEEE Transactions on Nuclear Science · 1988 · 71 citations

Engineering, Vlsi Design, Dose Rate +17