Concepedia
Statistics
Publications
18
Citations
663
H-Index
15
Active since
1985
Affiliations
MIT Lincoln Laboratory(Current)
Massachusetts Institute of Technology
Pennsylvania State University
Digital Wave (United States)
American University of Rome
G.J. Dunn is an author at MIT Lincoln Laboratory specializing in materials science, engineering, and oxide semiconductors.
Publications per year
1985–1994
Channel hot-carrier stressing of reoxidized nitrided silicon dioxide
G.J. Dunn, Shelley A. Scott · IEEE Transactions on Electron Devices · 1990 · 78 citations
Engineering, Electrical Engineering, Materials Science +17
Direct observation of interfacial point defects generated by channel hot hole injection in <i>n</i>-channel metal oxide silicon field effect transistors
John Krick, Patrick M. Lenahan, G.J. Dunn · Applied Physics Letters · 1991 · 77 citations
Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
E. Cartier, D. A. Buchanan, G.J. Dunn · Applied Physics Letters · 1994 · 75 citations
Engineering, Materials Engineering, Materials Science +13
Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs
G.J. Dunn, John Krick · IEEE Transactions on Electron Devices · 1991 · 53 citations
Reoxidized nitrided oxide for radiation-hardened MOS devices
G.J. Dunn, P.W. Wyatt · IEEE Transactions on Nuclear Science · 1989 · 51 citations
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