John Krick

Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal

Z.J. Ma, J.C. Chen, Z.H. Liu et al. · IEEE Electron Device Letters · 1994 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Direct observation of interfacial point defects generated by channel hot hole injection in <i>n</i>-channel metal oxide silicon field effect transistors

John Krick, Patrick M. Lenahan, G.J. Dunn · Applied Physics Letters · 1991 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs

G.J. Dunn, John Krick · IEEE Transactions on Electron Devices · 1991 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison of defect structure in N2O- and NH3-nitrided oxide dielectrics

J. T. Yount, Patrick M. Lenahan, John Krick · Journal of Applied Physics · 1994 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Optimization of gate oxide N/sub 2/O anneal for CMOSFET's at room and cryogenic temperatures

Zhi-Jian Ma, Zhi Hong Liu, John Krick et al. · IEEE Transactions on Electron Devices · 1994 · 23 citations

Engineering, Electrical Engineering, Materials Science +17