Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude

Abstract

This paper discusses the discrete channel dopant effects on the statistical variation of random telegraph signal (RTS) magnitude, which is defined by the threshold-voltage shift by RTS in MOSFETs. An analytical model for the statistical variation of RTS magnitude is presented. Considering discrete dopant effects, the RTS magnitude of MOSFETs exhibits a log-normal distribution, while the threshold voltage itself exhibits a normal distribution. The threshold-voltage shift by RTS will become a serious concern in 50-nm Flash memories and beyond.