Concepedia

Interface state density of free-standing GaN Schottky diodes

Sadia Muniza Faraz, H. Ashraf, P.R. Hageman, Muhammad Zubair Asghar, Q. Wahab

Semiconductor Science and Technology · 2010 · 23 citations · 36 references

DOI

Concepts

Abstract

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References

36

Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

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GaN: Processing, defects, and devices

S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations

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Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

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AlGaN/AlN/GaN high-power microwave HEMT

L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations

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Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 313 citations

, , +17