Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

TLDR

The study employs a generalized model of interface states that couples metal and semiconductor behavior, fabricating silicon Schottky diodes with 8–26 Å interfacial films to relate device characteristics to transmission coefficient reductions and fixed film charge. Analysis of the current–voltage data demonstrates how the model explains diode behavior and evaluates the C⁻²–V method for determining diffusion potentials.

Abstract

A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 Å in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.