H. Ashraf

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

J.L. Weyher, H. Ashraf, P.R. Hageman · Applied Physics Letters · 2009 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Thick GaN layers grown by HVPE: Influence of the templates

H. Ashraf, J.L. Weyher, G.W.G. van Dreumel et al. · Journal of Crystal Growth · 2008 · 26 citations

Engineering, Materials Engineering, Materials Science +12

Interface state density of free-standing GaN Schottky diodes

Sadia Muniza Faraz, H. Ashraf, P.R. Hageman et al. · Semiconductor Science and Technology · 2010 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

H. Ashraf, Sadia Muniza Faraz, Q. Wahab et al. · Journal of Applied Physics · 2010 · 16 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

T. Bohnen, Aryan E. F. de Jong, W.J.P. van Enckevort et al. · Journal of Crystal Growth · 2009 · 14 citations

Engineering, Materials Engineering, Materials Science +11